1N5711W-7-F
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| Part Number | 1N5711W-7-F |
|---|---|
| Manufacturer |
 Diodes Incorporated
|
| Description | The 1N5711W-7-F is a high-speed Schottky barrier diode manufactured by Diodes Incorporated, optimized for RF, detection, and fast switching applications. It is designed with a low forward voltage drop and ultra-fast switching characteristics, making it ideal for high-frequency signal processing. The device supports a maximum repetitive reverse voltage of 70V and a forward current of up to 15mA, providing reliable performance in low-power circuits. Its low forward voltage (approximately 1V max) helps reduce power losses and improves efficiency in sensitive analog and RF designs. With a very low junction capacitance of approximately 2pF, the 1N5711W-7-F is well-suited for high-frequency and RF applications, enabling minimal signal distortion and fast response times. The diode features a fast switching speed (nanosecond range) and low reverse recovery characteristics, making it effective for detection, mixing, and high-speed rectification circuits. It also incorporates guard ring construction for enhanced transient protection and reliability. Housed in a compact SOD-123 surface-mount package, it is suitable for automated assembly and high-density PCB layouts while maintaining strong thermal and electrical performance. The 1N5711W-7-F is widely used in RF detectors, signal demodulation circuits, high-frequency rectifiers, communication systems, and general-purpose high-speed switching applications, where low capacitance and fast response are critical. |
| Product Group | Diode |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOD123 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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1N5711W-7-F
1N5711W-7-F