BSS138
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | BSS138 |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The BSS138 is a widely used N-channel logic-level enhancement-mode MOSFET, ideal for low-voltage, low-current switching applications. Its compact SOT-23 surface-mount package and compatibility with 3.3V and 5V logic levels make it a staple in digital circuits, particularly for level shifting, signal interfacing, and load switching in microcontroller-based systems. |
| Product Group | Diode |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23-3 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | VGS = 0 V, ID = 250 µA | 50 | — | — | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 1 mA | 0.8 | 1.3 | 1.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 50 V, VGS = 0 V | — | — | 0.5 | µA |
| Gate-Body Leakage Current | IGSS | VGS = ±20 V, VDS = 0 V | — | — | ±100 | nA |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 0.22 A | — | 0.7 | 3.5 | ? |
| VGS = 4.5 V, ID = 0.22 A | — | 1.0 | 6.0 | ? | ||
| On-State Drain Current | ID(on) | VGS = 10 V, VDS = 5 V | 0.2 | — | — | A |
| Forward Transconductance | gFS | VDS = 10 V, ID = 0.22 A | 0.12 | 0.5 | — | S |
| Input Capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz | — | 27 | — | pF |
| Output Capacitance | Coss | Same as above | — | 13 | — | pF |
| Reverse Transfer Capacitance | Crss | Same as above | — | 6 | — | pF |
| Turn-On Delay Time | td(on) | VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 ? | — | 2.5 | 5 | ns |
| Rise Time | tr | Same as above | — | 9 | 18 | ns |
| Turn-Off Delay Time | td(off) | Same as above | — | 20 | 36 | ns |
| Fall Time | tf | Same as above | — | 7 | 14 | ns |
| Total Gate Charge | Qg | VDS = 25 V, ID = 0.22 A, VGS = 10 V | — | 1.7 | 2.4 | nC |
| Gate-Source Charge | Qgs | Same as above | — | 0.1 | — | nC |
| Gate-Drain Charge | Qgd | Same as above | — | 0.4 | — | nC |
| Drain-Source Diode Forward Voltage | VSD | IS = 0.44 A, VGS = 0 V | — | 0.8 | 1.4 | V |
| Maximum Continuous Drain Current | ID | — | — | — | 0.22 | A |
| Maximum Pulsed Drain Current | IDM | — | — | — | 0.88 | A |
| Maximum Power Dissipation | PD | TA = 25°C | — | — | 0.36 | W |
| Thermal Resistance, Junction to Ambient | R?JA | — | — | — | 350 | °C/W |
| Operating Junction Temperature Range | TJ | — | -55 | — | +150 | °C |
| Storage Temperature Range | Tstg | — | -55 | — | +150 | °C |
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BSS138
BSS138