Products Diode MURF860G


MURF860G


MURF860G, Diode, from ON Semiconductor in Stock Hong Kong The MURF860G is an ultrafast recovery rectifier diode designed for high-efficiency switching power applications. It features a repetitive peak reverse

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Part Number MURF860G
Manufacturer ON Semiconductor Official Vector Logo ON Semiconductor
Description The MURF860G is an ultrafast recovery rectifier diode designed for high-efficiency switching power applications. It features a repetitive peak reverse voltage of 600V and an average forward current of 8A, making it suitable for medium-power rectification tasks. The device offers low forward voltage drop typically around 2.2V at 8A and fast reverse recovery time of approximately 50 ns, enabling reduced switching losses and improved efficiency in high-frequency circuits . It provides low reverse leakage current around 5 µA at rated voltage and high surge current capability, supporting robust operation in demanding environments . The diode operates over a wide junction temperature range of -55°C to +150°C and features glass-passivated construction for enhanced reliability. Packaged in a TO-220 full-pack isolated form, it offers good thermal performance and electrical isolation, making it ideal for SMPS, freewheeling, snubber circuits, inverters, and industrial power conversion applications.
Product Group Diode
MOQ 1000 pcs
SPQ 50 pcs
Figure/Case TO-220FP, TO-220-2
Package TUBE Pack
PDF PDF Datasheet
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AttributeDescription
Manufactureronsemi
Part NumberMURF860G
FunctionFast-Recovery Rectifier Diode
SeriesSWITCHMODE™
Package TypeTO-220FP
Mounting TypeThrough Hole
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)8 A
Voltage - Forward (Vf) (Max) @ If1.5 V at 8 A
SpeedFast Recovery: ≤500 ns, >200 mA (Io)
Reverse Recovery Time (trr)60 ns
Current - Reverse Leakage @ Vr10 µA at 600 V
Operating Temperature - Junction-65°C to 175°C
Package / CaseTO-220-2 Full Pack
Supplier Device PackageTO-220FP







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