MMBT5179
| Part Number | MMBT5179 |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The MMBT5179 is a high-frequency NPN bipolar junction transistor (BJT) designed for low-noise amplification in UHF/VHF frequency ranges. Manufactured by ON Semiconductor, it is optimized for applications such as RF amplifiers, oscillators, and high-frequency signal processing in consumer electronics and communication devices. This transistor operates within a collector current range of 100 μA to 30 mA, making it suitable for both common-emitter and common-base configurations. It features a transition frequency (fT) of up to 2 GHz, ensuring high-speed performance in RF applications. The MMBT5179 offers a low noise figure of 5.0 dB at 200 MHz, which is critical for maintaining signal integrity in sensitive amplification stages. Key electrical characteristics include a collector-emitter voltage (VCEO) of 12 V, collector-base voltage (VCBO) of 20 V, and emitter-base voltage (VEBO) of 2.5 V. It supports a maximum collector current (IC) of 50 mA and a total power dissipation (PD) of 225 mW. The device is housed in a compact SOT-23 surface-mount package, facilitating integration into space-constrained designs. Its operating and storage junction temperature range spans from -55°C to +150°C, ensuring reliability across various environmental conditions. |
| Product Group | Diode |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23-3 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | IC = 3.0 mA, IB = 0 | 12 | — | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1.0 µA, IE = 0 | 20 | — | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 10 µA, IC = 0 | 2.5 | — | V |
| Collector Cutoff Current | ICBO | VCB = 15 V, IE = 0 | — | 0.02 | µA |
| VCB = 15 V, TA = 150°C | — | 1.0 | µA | ||
| DC Current Gain | hFE | IC = 3.0 mA, VCE = 1.0 V | 25 | 250 | — |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 10 mA, IB = 1.0 mA | — | 0.4 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 10 mA, IB = 1.0 mA | — | 1.0 | V |
| Transition Frequency | fT | IC = 5.0 mA, VCE = 6.0 V, f = 100 MHz | 900 | 2000 | MHz |
| Collector-Base Capacitance | Ccb | VCB = 10 V, IE = 0, f = 0.1 to 1.0 MHz | — | 1.0 | pF |
| Small-Signal Current Gain | hfe | IC = 2.0 mA, VCE = 6.0 V, f = 1.0 kHz | 25 | 300 | — |
| Collector-Base Time Constant | rb'Cc | IC = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz | 3.0 | 14 | ps |
| Noise Figure | NF | IC = 1.5 mA, VCE = 6.0 V, RS = 50?, f = 200 MHz | — | 5.0 | dB |
| Amplifier Power Gain | Gpe | VCE = 6.0 V, IC = 5.0 mA, f = 200 MHz | 15 | — | dB |
| Power Output | PO | VCB = 10 V, IE = 12 mA, f ? 500 MHz | 20 | — | mW |
| Total Device Dissipation | PD | TA = 25°C | — | 225 | mW |
| Thermal Resistance, Junction to Ambient | R?JA | — | — | 556 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | — | -55 | +150 | °C |
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MMBT5179
MMBT5179