BFR193WH6327XTSA1
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| Part Number | BFR193WH6327XTSA1 |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The BFR193WH6327XTSA1 is a high-performance NPN silicon RF bipolar transistor manufactured by Infineon Technologies, specifically developed for high-frequency, low-noise, and high-linearity radio frequency applications. Featuring an impressive 8GHz transition frequency (fT), this transistor provides excellent amplification characteristics for wireless communication equipment, RF signal processing circuits, and broadband amplifier designs. Its combination of low noise, high gain, and compact surface-mount packaging makes it a practical component for demanding RF applications operating at frequencies up to approximately 2GHz. The device features a maximum collector-emitter voltage (VCEO) of 12V and a maximum continuous collector current (IC) of 80mA, providing suitable electrical characteristics for low-power RF amplification stages. With a maximum power dissipation rating of 580mW under specified thermal conditions, the BFR193WH6327XTSA1 is designed to deliver reliable performance in compact electronic assemblies. Its silicon bipolar transistor structure provides predictable current amplification and stable high-frequency behavior when operated within the recommended electrical and thermal limits. One of the key advantages of the BFR193WH6327XTSA1 is its excellent low-noise RF performance. The transistor achieves a minimum noise figure (NFmin) of approximately 1dB at 900MHz, making it suitable for receiver front-end circuits and low-noise amplifier stages where maintaining signal quality is essential. Its high-frequency design helps minimize unwanted noise contributions while preserving weak incoming RF signals, supporting improved sensitivity in properly optimized receiver architectures. The transistor offers strong amplification capability with a maximum available gain (Gmax) of approximately 16dB at 900MHz. It also provides excellent linearity characteristics, including a typical output third-order intercept point (OIP3) of 30dBm at 900MHz and an output 1dB compression point (OP1dB) of 13dBm at 900MHz. These performance characteristics make the device particularly useful in RF amplifier circuits where low distortion, high dynamic range, and accurate signal reproduction are important design requirements. The BFR193WH6327XTSA1 features a minimum DC current gain (hFE) of 70 at IC = 30mA and VCE = 8V, supporting effective transistor biasing and amplification in suitable RF circuit configurations. Its high transition frequency and optimized semiconductor structure allow designers to implement low-noise amplifiers, broadband gain stages, RF buffer circuits, and intermediate-frequency amplification systems. Proper impedance matching, bias network design, and PCB layout are essential for achieving the specified high-frequency performance. The device is supplied in a compact 3-pin SOT-323 (SC-70) surface-mount package, providing a space-efficient solution for densely populated RF circuit boards. The small package footprint supports short signal paths and helps reduce parasitic effects associated with high-frequency circuit layouts. The transistor has a maximum junction temperature rating of +150°C and is manufactured using lead-free, RoHS-compliant materials, making it compatible with modern electronic assembly processes and environmental compliance requirements. The BFR193WH6327XTSA1 ordering code identifies the Tape & Reel packaging configuration with 3,000 pieces per manufacturer reel, supporting automated pick-and-place assembly and high-volume PCB manufacturing. The component belongs to the BFR193W high-linearity RF transistor family. As this product has been designated for discontinuation, engineers should consider lifecycle status and replacement qualification when selecting components for new designs or maintaining existing equipment. The BFR193WH6327XTSA1 is suitable for applications including wireless communication equipment, RF receiver front ends, low-noise amplifiers (LNA), broadband RF amplifiers, cellular communication circuits, radio transceivers, RF signal conditioning systems, telecommunications equipment, and high-frequency industrial electronics. Its combination of 8GHz transition frequency, 1dB minimum noise figure, 16dB available gain at 900MHz, high linearity, and compact SOT-323 packaging makes it a versatile solution for engineers developing and servicing reliable high-frequency electronic systems. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BFR193WH6327XTSA1
BFR193WH6327XTSA1