FDB14N30TM
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| Part Number | FDB14N30TM |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The FDB14N30TM is a high-voltage N-channel power MOSFET developed by onsemi (formerly Fairchild Semiconductor), designed for efficient switching applications in power electronics. It is based on advanced planar stripe DMOS (UniFET™) technology, optimized for low conduction losses and improved switching performance. This device supports a drain-source voltage of 300V and a continuous drain current of up to 14A, making it suitable for medium-to-high power applications such as power supplies and converters. The FDB14N30TM features a low RDS(on) of approximately 0.29Ω and a low total gate charge (~18 nC), enabling efficient switching with reduced power dissipation and improved overall system efficiency. It offers fast switching characteristics and improved dv/dt capability, along with high avalanche energy robustness, making it reliable under demanding switching conditions. The MOSFET operates across a wide temperature range of -55°C to +150°C and supports high power dissipation up to approximately 140W, ensuring stable performance in industrial environments. Packaged in a thermally efficient D2PAK (TO-263) surface-mount package, the FDB14N30TM is well suited for high-density PCB layouts with effective heat management. The FDB14N30TM is widely used in switch-mode power supplies (SMPS), power factor correction (PFC), LED drivers, UPS systems, and industrial power converters, where high-voltage switching efficiency and reliability are essential. |
| Product Group | Transistor |
| MOQ | 800 pcs |
| SPQ | 800 pcs |
| Figure/Case | D2PAK |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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FDB14N30TM
FDB14N30TM