IRF7351TRPBF
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| Part Number | IRF7351TRPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The IRF7351TRPBF is a high-efficiency dual N-channel power MOSFET developed by Infineon Technologies, designed for compact and high-performance switching applications. It integrates two independent N-channel MOSFETs in a single SO-8 package, enabling space-saving designs and simplified circuit layouts. This device supports a drain-source voltage of 60V and a continuous drain current up to 8A per channel, making it suitable for a wide range of power management and load switching applications. The IRF7351TRPBF features a low RDS(on) of approximately 17.8 mΩ, which minimizes conduction losses and improves overall system efficiency, especially in DC-DC converters and power switching circuits. Built using advanced HEXFET® MOSFET technology, the device offers fast switching performance, low gate charge, and reliable thermal characteristics. It operates over a wide temperature range from -55°C to +150°C, ensuring stable performance in demanding environments. With a maximum power dissipation of around 2W and compact footprint, the IRF7351TRPBF is optimized for high-density PCB designs and efficient thermal management. The IRF7351TRPBF is widely used in DC-DC converters, synchronous rectification, battery-powered devices, load switching, and power management systems, where compact size and high efficiency are essential. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | SOIC-8 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRF7351TRPBF
IRF7351TRPBF