Products DRAM M321R4GA3EB2-CCP


M321R4GA3EB2-CCP


Part Number M321R4GA3EB2-CCP
Manufacturer Samsung Official Vector Logo Samsung
Description This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organization and a full 72‑bit + ECC data path. Operating at PC5‑51200 bandwidth (~51.2 GB/s), it uses an efficient 1.1 V supply and features a CAS latency of CL52, delivering high-speed performance optimized for server workloads. Engineered for enterprise environments, it includes ECC error correction and a registered buffer to enhance signal integrity and reliability in multi‑DIMM systems. It supports both x8 and x4 DRAM organization, across two ranks per DIMM and up to 2 DIMMs-per-channel configurations. Built in the standard 288‑pin DDR5 RDIMM form factor, the module comprises 20 × 2 Gb × 8 DRAM chips, is in mass production, and complies with RoHS and halogen-free standards. It is commonly validated by Supermicro and OEMs for broad server compatibility and typically available through major enterprise distributors.
Product Group DRAM
MOQ 45 pcs
SPQ 15 pcs
Figure/Case 288-RDIMM
Package TRAY Pack
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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  • Capacity: 32 GB, dual-rank ×8
  • Speed/Bandwidth: DDR5‑6400 MT/s (PC5‑51200), CL52
  • Voltage: Efficient 1.1 V
  • Reliability: ECC + registered buffer
  • Form Factor: 288‑pin RDIMM; up to 2 ranks and 2 DIMMs per channel
  • Standards & Availability: Mass-produced, RoHS/halogen-free, Supermicro/OEM-validated, widely stocked






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    M321R4GA3EB2-CCP datasheet, M321R4GA3EB2-CCP specifications, M321R4GA3EB2-CCP features, M321R4GA3EB2-CCP pinout, M321R4GA3EB2-CCP Arduino, M321R4GA3EB2-CCP price, M321R4GA3EB2-CCP circuit diagram, M321R4GA3EB2-CCP development board, M321R4GA3EB2-CCP app M321R4GA3EB2-CCP Application M321R4GA3EB2-CCP Stock Quote M321R4GA3EB2-CCP Best Price M321R4GA3EB2-CCP Free Stock M321R4GA3EB2-CCP Lead Time M321R4GA3EB2-CCP Delivery Time M321R4GA3EB2-CCP Stock , This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organization and a full 72‑bit + ECC data path. Operating at PC5‑51200 bandwidth (~51.2 GB/s), it uses an efficient 1.1 V supply and features a CAS latency of CL52, delivering high-