Products DRAM M321R8GA0EB2-CWM


M321R8GA0EB2-CWM


Part Number M321R8GA0EB2-CWM
Manufacturer Samsung Official Vector Logo Samsung
Description This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, designed for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s) and operates on a low 1.1 V power supply, with a CAS latency of CL46, ensuring both high throughput and timing stability. Engineered for enterprise environments, it includes ECC error‑correction and a registered buffer (on-module register) to enhance signal integrity and reliability under dense, multi-DIMM configurations, supporting x4 or x8 chip organization across up to 2 ranks and 2 DIMMs-per-channel setups.
Product Group DRAM
MOQ 100 pcs
SPQ 20 pcs
Figure/Case 288-RDIMM
Package TRAY Pack
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
Send RFQ sales@signalhk.com


  • Capacity: 64 GB, dual-rank RDIMM
  • Speed/Bandwidth: DDR5‑5600 MT/s (PC5‑44800) with CL46 latency
  • Voltage: Efficient 1.1 V operation
  • Reliability: ECC + registered buffer for enterprise-grade stability
  • Form Factor: 288‑pin DDR5 RDIMM, support for x4/x8 organization, 2R, and 2 DPC
  • Production Status: Mass production, widespread OEM/distributor availability






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    M321R8GA0EB2-CWM datasheet, M321R8GA0EB2-CWM specifications, M321R8GA0EB2-CWM features, M321R8GA0EB2-CWM pinout, M321R8GA0EB2-CWM Arduino, M321R8GA0EB2-CWM price, M321R8GA0EB2-CWM circuit diagram, M321R8GA0EB2-CWM development board, M321R8GA0EB2-CWM app M321R8GA0EB2-CWM Application M321R8GA0EB2-CWM Stock Quote M321R8GA0EB2-CWM Best Price M321R8GA0EB2-CWM Free Stock M321R8GA0EB2-CWM Lead Time M321R8GA0EB2-CWM Delivery Time M321R8GA0EB2-CWM Stock , This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, designed for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s) and operates on a low 1.1 V power supply, with a CAS latency of CL46,